About the Book

John D. Cressler, The Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, CRC Press, Boca Raton, FL, 2006, 1210 pages (ISBN 0-8493-3559-0).

Note that five additional volumes were spawned from this book.

A comprehensive and up-to-date guide to all aspects of silicon heterostructures. An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, The Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source.

Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snap-shots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology.

Containing 1224 pages, and nearly 1000 figures along with valuable appendices, The Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Features

  • Provides broad, comprehensive, in-depth, and authoritative coverage of the current state of the field
  • Features a global "who's who" of expert contributors, each from a leading industrial or research organization from around the world
  • Presents up-to-date research results, a comprehensive list of seminal references, and state-of-the-art devices and circuits
  • Includes a foreword by Dr. Bernard S. Meyerson, nearly 1000 figures, and indispensable appendices

Audience

Integrated circuit manufacturers, material scientists and engineers, physicists, device engineers, circuit designers, reliability engineers, processing engineers, and semiconductor manufacturers -- anyone involved with the materials, fabrication, device physics, transistor optimization, measurement, compact modeling, circuit design, and device simulation of Si-based heterostructure devices and circuits, and graduate students in all of these areas.

Contents by Chapter

Preface
Foreword; B. Meyerson

INTRODUCTION; J.D. Cressler
The Big Picture, A Brief History of the Field

SiGe AND Si STRAINED-LAYER EPITAXY
Strained SiGe and Si Epitaxy; B. Tillack, Si/SiGe:C Epitaxy by RTCVD; D. Dutartre, MBE Growth Techniques; M. Oehme, UHV/CVD Growth Techniques; T. Adams, Defects and Diffusion in Strained SiGe and Si; A. Peaker, Stability Constraints in SiGe Epitaxy; A. Fischer, Electronic Properties of Strained Si/SiGe and Si1-yCy Alloys; J. Hoyt, Carbon Doping of SiGe; J. Osten, Contact Metallization on SiGe; C. Maiti, Selective Etching Techniques for SiGe/Si; S. Monfray

FABRICATION OF SiGe HBT BiCMOS TECHNOLOGY
Device Structures and BiCMOS Integration Issues; D. Harame, Fabricating SiGe HBTs on CMOS-Compatible SOI; J. Cai, Passive Components; J.N. Burghartz, Industry Examples at the State-of-the-Art: IBM; A. Joseph, Industry Examples at the State-of-the-Art: Jazz; P. Kempf, Industry Examples at the State-of-the-Art: Hitachi; K. Washio, Industry Examples at the State-of-the-Art: Infineon; T. Meister, Industry Examples at the State-of-the-Art: IHP; D. Knoll, Industry Examples at the State-of-the-Art: ST; A. Chantre, Industry Examples at the State-of-the-Art: TI; B. El-Kareh, Industry Examples at the State-of-the-Art: Philips; R. Colclaser

SiGe HBTs
Device Physics; J.D. Cressler, Second-Order Effects; J.D. Cressler, Low-Frequency Noise; G. Niu, Broadband Noise; D. Greenberg, Microscopic Noise Simulation; G. Niu, Linearity; G. Niu, pnp SiGe HBTs; J.D. Cressler, Temperature Effects; J.D. Cressler, Radiation Effects; J.D. Cressler, Reliability Issues; J.D. Cressler, Self-Heating and Thermal Effects; J-S. Rieh, Device-Level Simulation; G. Niu, Performance Limits; G. Freeman

HETEROSTRUCTURE FETs
Biaxial Strained-Si CMOS; K. Rim, Uniaxial Stressed-Si MOSFETs; S. Thompson, SiGe-channel HFETs; S. Banerjee, Industry Examples at The-State-of-the-Art: Intel 90 nm Logic Technologies; S. Thompson

OTHER HETEROSTRUCTURE DEVICES
Resonant Tunneling Devices; S. Tsujino, IMPATT Diodes; M. Oehme, Engineered Substrates for Electronic and Optoelectronic Applications; E.A. Fitzgerald, Self-Assembling Nanostructures in Ge(Si)/Si Heteroepitaxy; R. Hull

OPTOELECTRONIC COMPONENTS
Si/SiGe LEDs; K. Wang, Near Infrared Detectors; L. Colace, Si-Based Photonic Transistors for Integrated Optoelectronics; W. Ni, Si/SiGe Quantum Cascade Emitters; D. Paul

MEASUREMENT AND MODELING
Best-Practice ac Measurement Techniques; R. Groves, Industrial Application of TCAD for SiGe Development; D. Sheridan, Compact Modeling of SiGe HBTs: HICUM; M. Schröter, Compact Modeling of SiGe HBTs: MEXTRAM; S. Mijalkovic, CAD Tools and Design Kits; S. Strang, Parasitic Modeling and Noise Mitigation Approaches in SiGe RF Designs; R. Singh, Transmission Lines on Si; Y. Tretiakov, Improved De-Embedding Techniques; Q. Liang

CIRCUITS AND APPLICATIONS
SiGe as an Enabler for Wireless Communications Systems; L. Larson, LNA Optimization Strategies; Q. Liang, Linearization Techniques; L. de Vreede, SiGe MMICs; H. Schumacher, SiGe mm-Wave ICs; J-F. Luy, Wireless Building Blocks Using SiGe HBTs; J. Long, Direct Conversion Architectures for SiGe Radios; J. Laskar, RF MEMS Techniques in Si/SiGe; J. Papapolymerou, Wideband Antennas on Si; M. Tentzeris, Packaging Issues for SiGe Circuits; J. Laskar, Industry Examples at The-State-of-the-Art: IBM; D. Friedman, Industry Examples at The-State-of-the-Art: Hitachi; K. Washio, Industry Examples at The-State-of-the-Art: ST; D. Belot

APPENDICES
Properties of Si and Ge; J.D. Cressler, The Generalized Moll-Ross Relations; J.D. Cressler, Generalized Integral Charge Control Relations; M. Schröter, Sample SiGe HBT Compact Model Parameters; R. Malladi

INDEX